EP4CE75F29I7 vs EP4CE115F23I7N 比較
詳細並排比較 EP4CE75F29I7 由 Intel 與 EP4CE115F23I7N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP4CE75F29I7 | EP4CE115F23I7N |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Series | Cyclone IV E | Cyclone IV E |
| Manufacturer | Intel (formerly Altera) | — |
| Logic Elements (LEs) | 75,408 | — |
| Embedded Memory (bits) | 2,810,880 | — |
| Embedded Memory Blocks | 274 (M9K) | — |
| Embedded 18×18 Multipliers | 200 | — |
| PLLs | 4 | — |
| User I/O Count | 426 | — |
| 封裝 | 780-ball FBGA (FineLine BGA) | 484-FBGA (F23) 23x23 mm, 1.0 mm pitch |
| 工作溫度 | -40 °C to +100 °C (Industrial) | -40C to +100C (Industrial) |
| Process Node | 60 nm low-power CMOS | — |
| Core Voltage (VCCINT) | 1.0 V / 1.2 V selectable | — |
| Configuration Modes | JTAG, Active Serial (AS), Passive Serial (PS) | — |
| I/O Standards Supported | LVDS, LVTTL, LVCMOS, SSTL, HSTL | — |
| External Memory Interfaces | DDR/DDR2 SDRAM, QDRII SRAM | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 3 (168 hours) | 3 |
| 安裝類型 | Surface Mount (BGA) | Surface Mount |
| Family | — | EP4CE115 (F23 package) |
| Logic Elements (LE) | — | 114,480 |
| Embedded Memory Bits | — | 3,981,312 bits |
| Maximum User I/Os | — | 280 |
| Logic Array Blocks (LABs) | — | 7,180 |
| Number of PLLs | — | 4 |
| 18x18 Hardware Multipliers | — | 266 |
| Core Voltage | — | 1.0 V / 1.2 V |
| I/O Voltage Banks | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Process Technology | — | 60 nm low-power CMOS (TSMC) |
| Configuration Method | — | JTAG, Active Serial, Active Parallel |
| Lead-Free | — | Yes |