EP4CGX110DF31I7 vs EP4CGX110DF31C8N Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci EP4CGX110DF31I7 disebabkan oleh Intel dan EP4CGX110DF31C8N disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr EP4CGX110DF31I7 EP4CGX110DF31C8N
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Series Cyclone IV GX —
Device Logic Elements 109,424 —
Total Memory Bits 5,621,760 —
Number of Logic Array Blocks (LABs) Not specified in provided data [DATA_NEEDED: LAB count] —
Number of I/O 475 user I/O —
Multipliers (18x18) 432 —
PLLs 4 4 general-purpose PLLs
Transceivers 8 (up to 3.125 Gbps) 8 high-speed transceivers up to 3.125 Gbps
M9K Memory Blocks 270 —
Kemasan 896-BGA (FBGA-896), 31 mm 896-ball FineLine BGA (F31), 31 mm
Ball Pitch 0.8 mm —
Speed Grade -7 8
Temperature Grade Industrial (-40C to +100C Tj) —
Core Voltage 1.2 V typical —
Configuration Method SRAM (EPCS or JTAG) —
Jenis Pemasangan Surface Mount —
Aras MSL 3 (per JEDEC J-STD-020) [DATA_NEEDED: floor life days] —
Status RoHS Compliant Compliant
Family — Cyclone IV GX
Logic Elements — 109,424
Logic Array Blocks (LABs) — 6,839
Embedded Memory Bits — 5,621,760 (approximately 702 Kbits)
Embedded Memory Blocks — M9K blocks, 9-bit parity
DSP Blocks (18x18 Multipliers) — 264 multipliers
Maximum User I/Os — 475
I/O Banks — 8
PCI Express Hard IP — PCIe Gen1/Gen2 x1/x2/x4
Core Supply Voltage — 1.2 V
Process Technology — 60 nm low-power CMOS
Operating Temperature (Commercial) — 0C to 85C
Configuration — SRAM-based, supports AS, PS, JTAG, FPP

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