EP4CGX110DF31I7 vs EP4CGX110DF31C8N 比較

詳細並排比較 EP4CGX110DF31I7 由 Intel 與 EP4CGX110DF31C8N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 EP4CGX110DF31I7 EP4CGX110DF31C8N
品牌 Intel Intel
類別 FPGA & CPLD FPGA & CPLD
生命週期狀態 啟用中 啟用中
Series Cyclone IV GX —
Device Logic Elements 109,424 —
Total Memory Bits 5,621,760 —
Number of Logic Array Blocks (LABs) Not specified in provided data [DATA_NEEDED: LAB count] —
Number of I/O 475 user I/O —
Multipliers (18x18) 432 —
PLLs 4 4 general-purpose PLLs
Transceivers 8 (up to 3.125 Gbps) 8 high-speed transceivers up to 3.125 Gbps
M9K Memory Blocks 270 —
封裝 896-BGA (FBGA-896), 31 mm 896-ball FineLine BGA (F31), 31 mm
Ball Pitch 0.8 mm —
Speed Grade -7 8
Temperature Grade Industrial (-40C to +100C Tj) —
Core Voltage 1.2 V typical —
Configuration Method SRAM (EPCS or JTAG) —
安裝類型 Surface Mount —
MSL 等級 3 (per JEDEC J-STD-020) [DATA_NEEDED: floor life days] —
RoHS 狀態 Compliant Compliant
Family — Cyclone IV GX
Logic Elements — 109,424
Logic Array Blocks (LABs) — 6,839
Embedded Memory Bits — 5,621,760 (approximately 702 Kbits)
Embedded Memory Blocks — M9K blocks, 9-bit parity
DSP Blocks (18x18 Multipliers) — 264 multipliers
Maximum User I/Os — 475
I/O Banks — 8
PCI Express Hard IP — PCIe Gen1/Gen2 x1/x2/x4
Core Supply Voltage — 1.2 V
Process Technology — 60 nm low-power CMOS
Operating Temperature (Commercial) — 0C to 85C
Configuration — SRAM-based, supports AS, PS, JTAG, FPP

資料表與資源

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