H5AN4G8NBJR-RDC vs H5AN4G6NBJR-RDC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-RDC disebabkan oleh SK hynix dan H5AN4G6NBJR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr H5AN4G8NBJR-RDC H5AN4G6NBJR-RDC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit 4 Gb
Organisasi 512M x 8 256M x 16
Antaramuka DDR4 (Double Data Rate IV) CMOS, fully synchronous
Kemasan 78-ball FBGA —
Jenis Pemasangan Surface Mount Surface Mount
Tegangan Pemberi Arus [DATA_NEEDED: VDD supply voltage] 1.2 V
Kadar Data [DATA_NEEDED: speed grade Mbps] —
Bank Architecture 8 banks with 4 bank groups (x8) —
Refresh Auto-refresh and self-refresh —
Temperature Grade [DATA_NEEDED: operating temperature range] OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet
Termination On-Die Termination (ODT) —
Status RoHS Lead-Free & Halogen-Free (RoHS Compliant) —
Process Technology CMOS —
Manufacturer SK hynix —
Family Series H5AN4G4/8/6NBJR —
Package Code — TFBGA (FBGA-96)
Package Shape — Rectangular
Package Width — 7.5 mm
Number of Terminals — 96
Self Refresh — Auto / Self Refresh
Data Mask Function — Yes
Asynchronous Reset — Yes
On-Die Termination — Dynamic ODT
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes
Lead-Free / Halogen-Free — Yes (per datasheet cover: Lead-Free & Halogen-Free)
Speed Grade — -RDC (see manufacturer datasheet for validated data-rate bin)

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