H5AN8G6NAFR-RDC vs H5AN8G8NAFR-RDC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NAFR-RDC disebabkan oleh SK hynix dan H5AN8G8NAFR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G6NAFR-RDC | H5AN8G8NAFR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 8 Gb | — |
| Organisasi | 512M x 16 | 1G x 8 (x8) |
| Tegangan Pemberi Arus | 1.2 V | — |
| Antaramuka | DDR4 (JEDEC-standard) | DDR4 (Double Data Rate 4) |
| Access Mode | Multi Bank Page Burst | — |
| Package Code | TFBGA | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Temperature Grade | OTHER (per Partstack listing) | — |
| Technology | CMOS | — |
| Status RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant |
| Speed Grade | -RDC (see datasheet for bin timing) | -RDC (DDR4-2666 class) |
| Family | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC | — |
| Max Clock Rate | [DATA_NEEDED: max clock rate for -RDC bin] | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature range] |
| Density | — | 8 Gbit |
| Kadar Data | — | 2666 MT/s (per -R speed grade suffix) |
| Core Supply Voltage (VDD) | — | 1.2 V |
| I/O Supply Voltage (VDDQ) | — | 1.2 V |
| Wordline Supply (VPP) | — | 2.5 V |
| Banks / Bank Groups | — | 16 banks / 4 bank groups (DDR4 8Gb architecture) |
| Burst Length | — | 8 (BL8) |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Kemasan | — | 78-ball FBGA |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| Datasheet Revision | — | Rev. 1.2 / Jul. 2017 |