H5AN8G6NAFR-RDC vs H5AN8G8NAFR-RDC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G6NAFR-RDC sa pamamagitan ng SK hynix at H5AN8G8NAFR-RDC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G6NAFR-RDC | H5AN8G8NAFR-RDC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 8 Gb | — |
| Organisasyon | 512M x 16 | 1G x 8 (x8) |
| Volte ng Pagbibigay | 1.2 V | — |
| Interface | DDR4 (JEDEC-standard) | DDR4 (Double Data Rate 4) |
| Access Mode | Multi Bank Page Burst | — |
| Package Code | TFBGA | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature Grade | OTHER (per Partstack listing) | — |
| Technology | CMOS | — |
| Tindminan RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant |
| Speed Grade | -RDC (see datasheet for bin timing) | -RDC (DDR4-2666 class) |
| Family | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC | — |
| Max Clock Rate | [DATA_NEEDED: max clock rate for -RDC bin] | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature range] |
| Density | — | 8 Gbit |
| Rate ng Data | — | 2666 MT/s (per -R speed grade suffix) |
| Core Supply Voltage (VDD) | — | 1.2 V |
| I/O Supply Voltage (VDDQ) | — | 1.2 V |
| Wordline Supply (VPP) | — | 2.5 V |
| Banks / Bank Groups | — | 16 banks / 4 bank groups (DDR4 8Gb architecture) |
| Burst Length | — | 8 (BL8) |
| Latensya ng CAS | — | [DATA_NEEDED: CAS Latency] |
| Packhaging | — | 78-ball FBGA |
| Lead-Free | — | Yes |
| Wala sa Halogen | — | Yes |
| Datasheet Revision | — | Rev. 1.2 / Jul. 2017 |