H5AN8G6NAFR-RDC vs H5AN8G8NAFR-RDC 对比

详细并排对比 H5AN8G6NAFR-RDC 出自 SK hynix 和 H5AN8G8NAFR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G6NAFR-RDC H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC ✓ 量产中
SK hynix
H5AN8G8NAFR-RDC H5AN8G8NAFR-RDC - 8Gb DDR4 SDRAM x8 | SK hynix

H5AN8G8NAFR-RDC - 8Gb DDR4 SDRAM x8 | SK hynix

H5AN8G8NAFR-RDC ✓ 量产中

规格对比

参数 H5AN8G6NAFR-RDC H5AN8G8NAFR-RDC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.05 $2.95
存储器类型 DDR4 SDRAM DDR4 SDRAM
Memory Density 8 Gb —
存储组织 512M x 16 1G x 8 (x8)
电源电压 1.2 V —
接口 DDR4 (JEDEC-standard) DDR4 (Double Data Rate 4)
Access Mode Multi Bank Page Burst —
Package Code TFBGA —
Package Shape Rectangular —
Number of Terminals 96 —
安装类型 Surface Mount Surface Mount
Temperature Grade OTHER (per Partstack listing) —
Technology CMOS —
RoHS 状态 Compliant (Lead-Free & Halogen-Free) Compliant
Speed Grade -RDC (see datasheet for bin timing) -RDC (DDR4-2666 class)
Family H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC —
Max Clock Rate [DATA_NEEDED: max clock rate for -RDC bin] —
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature range]
Density — 8 Gbit
数据速率 — 2666 MT/s (per -R speed grade suffix)
Core Supply Voltage (VDD) — 1.2 V
I/O Supply Voltage (VDDQ) — 1.2 V
Wordline Supply (VPP) — 2.5 V
Banks / Bank Groups — 16 banks / 4 bank groups (DDR4 8Gb architecture)
Burst Length — 8 (BL8)
CAS 延迟 — [DATA_NEEDED: CAS Latency]
封装 — 78-ball FBGA
Lead-Free — Yes
无卤 — Yes
Datasheet Revision — Rev. 1.2 / Jul. 2017

数据手册与资源

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