H5AN8G6NAFR-RDC vs MT40A512M16JY-075E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NAFR-RDC disebabkan oleh SK hynix dan MT40A512M16JY-075E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G6NAFR-RDC | MT40A512M16JY-075E |
|---|---|---|
| Merek | SK hynix | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 8 Gb | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Tegangan Pemberi Arus | 1.2 V | — |
| Antaramuka | DDR4 (JEDEC-standard) | Parallel |
| Access Mode | Multi Bank Page Burst | — |
| Package Code | TFBGA | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Temperature Grade | OTHER (per Partstack listing) | — |
| Technology | CMOS | — |
| Status RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant |
| Speed Grade | -RDC (see datasheet for bin timing) | — |
| Family | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC | — |
| Max Clock Rate | [DATA_NEEDED: max clock rate for -RDC bin] | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Saiz Ingatan | — | 8 Gbit |
| Clock Frequency | — | 1.33 GHz |
| Kadar Data | — | 2666 MT/s |
| Supply Voltage (VDD/VDDQ) | — | 1.14V to 1.26V |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| Kemasan | — | 96-FBGA (8x14) |
| Gambaran Suhu Operasi | — | 0°C to +95°C (TC) |
| Refresh Time | — | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| Ciri-ciri | — | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | — | 1.2V pseudo open-drain |