H5AN8G6NAFR-RDC vs MT40A512M16JY-075E 比較
詳細並排比較 H5AN8G6NAFR-RDC 由 SK hynix 與 MT40A512M16JY-075E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G6NAFR-RDC | MT40A512M16JY-075E |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 8 Gb | — |
| 組織 | 512M x 16 | 512M x 16 |
| 供應電壓 | 1.2 V | — |
| 介面 | DDR4 (JEDEC-standard) | Parallel |
| Access Mode | Multi Bank Page Burst | — |
| Package Code | TFBGA | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Temperature Grade | OTHER (per Partstack listing) | — |
| Technology | CMOS | — |
| RoHS 狀態 | Compliant (Lead-Free & Halogen-Free) | Compliant |
| Speed Grade | -RDC (see datasheet for bin timing) | — |
| Family | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC | — |
| Max Clock Rate | [DATA_NEEDED: max clock rate for -RDC bin] | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | — |
| 記憶體容量 | — | 8 Gbit |
| Clock Frequency | — | 1.33 GHz |
| 資料速率 | — | 2666 MT/s |
| Supply Voltage (VDD/VDDQ) | — | 1.14V to 1.26V |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| 封裝 | — | 96-FBGA (8x14) |
| 工作溫度範圍 | — | 0°C to +95°C (TC) |
| Refresh Time | — | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| 功能特色 | — | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | — | 1.2V pseudo open-drain |