H5AN8G6NAFR-UHC vs H5AN8G6NAFR-PBC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NAFR-UHC disebabkan oleh SK hynix dan H5AN8G6NAFR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G6NAFR-UHC | H5AN8G6NAFR-PBC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM (CMOS) | DDR4 SDRAM |
| Memory Density | 8 Gbit | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Tegangan Pemberi Arus | 1.2 V | — |
| Kadar Data | 2400 MT/s | — |
| Clock Architecture | Differential clock (CK_t / CK_c), fully synchronous | — |
| Kemasan | 96-ball FBGA (TFBGA) | TFBGA-96 (rectangular) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Refresh | Auto self-refresh | Auto / Self Refresh |
| Precharge | Auto precharge function | — |
| Reset | Asynchronous reset function | — |
| Data Mask | DM function supported | — |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration function | — |
| Error Checking | CRC function | — |
| Write Leveling | Write leveling function supported | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant (Lead-Free & Halogen-Free) |
| Density | — | 8 Gbit |
| VDD Supply Voltage | — | 1.20 V +/- 0.06 V |
| VDDQ Supply Voltage | — | 1.20 V +/- 0.06 V |
| VPP Supply Voltage | — | 2.5 V +0.25/-0.125 V |
| Jenis Antaramuka | — | DDR4 (parallel, double data rate) |
| Speed Bins Supported | — | DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables) |
| DLL | — | DLL ON mode for speed bin operation |
| Clock | — | Differential clock (CK/CK#) |
| Number of Terminals | — | 96 |
| Composition | — | CMOS |