H5AN8G6NAFR-UHC vs H5AN8G6NAFR-PBC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G6NAFR-UHC sa pamamagitan ng SK hynix at H5AN8G6NAFR-PBC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G6NAFR-UHC | H5AN8G6NAFR-PBC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM (CMOS) | DDR4 SDRAM |
| Memory Density | 8 Gbit | — |
| Organisasyon | 512M x 16 | 512M x 16 |
| Volte ng Pagbibigay | 1.2 V | — |
| Rate ng Data | 2400 MT/s | — |
| Clock Architecture | Differential clock (CK_t / CK_c), fully synchronous | — |
| Packhaging | 96-ball FBGA (TFBGA) | TFBGA-96 (rectangular) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Refresh | Auto self-refresh | Auto / Self Refresh |
| Precharge | Auto precharge function | — |
| Reset | Asynchronous reset function | — |
| Data Mask | DM function supported | — |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration function | — |
| Error Checking | CRC function | — |
| Write Leveling | Write leveling function supported | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant (Lead-Free & Halogen-Free) |
| Density | — | 8 Gbit |
| VDD Supply Voltage | — | 1.20 V +/- 0.06 V |
| VDDQ Supply Voltage | — | 1.20 V +/- 0.06 V |
| VPP Supply Voltage | — | 2.5 V +0.25/-0.125 V |
| Uri ng Interface | — | DDR4 (parallel, double data rate) |
| Speed Bins Supported | — | DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables) |
| DLL | — | DLL ON mode for speed bin operation |
| Clock | — | Differential clock (CK/CK#) |
| Number of Terminals | — | 96 |
| Composition | — | CMOS |