H5AN8G6NAFR vs H5AN8G6NDJR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NAFR disebabkan oleh SK hynix dan H5AN8G6NDJR disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G6NAFR | H5AN8G6NDJR |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 512M x 16 | 512M x 16 |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Kadar Data | 2400 MT/s | 3200 Mbps (DDR4-3200) |
| Kemasan | 96-ball FBGA | 96-ball FBGA (13mm x 7.5mm) |
| Suhu Operasi | 0°C to +85°C | — |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| RoHS Compliant | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Dynamic ODT | Yes | — |
| ZQ Calibration | Yes | — |
| CRC | Yes | — |
| Write Leveling | Yes | — |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Latensi CAS | — | 22 cycles (at 3200 Mbps) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |
| Ciri-ciri | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |