H5AN8G6NDJR vs K4A8G085WB-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NDJR disebabkan oleh SK hynix dan K4A8G085WB-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung
K4A8G085WB-BCTD ✓ AktifPengandingan Spesifikasi
| Parametr | H5AN8G6NDJR | K4A8G085WB-BCTD |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $8.53 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 512M x 16 | 1G x 8 |
| Kadar Data | 3200 Mbps (DDR4-3200) | 2666 Mbps |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Kemasan | 96-ball FBGA (13mm x 7.5mm) | FBGA-78 (78-ball TFBGA) |
| Number of Terminals | 96 | — |
| Maximum Supply Voltage (Vsup) | 1.26 V | — |
| Maximum Operating Temperature | 85 °C | — |
| Burst Length | 8 (BL8), 4 (BC4) | BL8 |
| Latensi CAS | 22 cycles (at 3200 Mbps) | — |
| Access Mode | Multi Bank Page Burst | — |
| JESD-30 Code | R-PBGA-B96 | — |
| RoHS | Compliant | — |
| Ciri-ciri | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling | ZQ calibration, CRC, CA parity, asynchronous reset |
| Die Revision | — | B-die |
| Jenis Pemasangan | — | Surface Mount |
| Bank Structure | — | 16 banks, 4 bank groups |
| Termination | — | On-Die Termination (ODT), dynamic ODT |
| Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Speed Bin | — | -BCTD (CL-tRCD-tRP bin) |
| Terminations | — | 78 |
| JEDEC-30 Package Code | — | R-PBGA-B78 |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |