H5AN8G8NCJR-RDC vs H5AN8G8NCJR-UHC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NCJR-RDC disebabkan oleh SK hynix dan H5AN8G8NCJR-UHC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5AN8G8NCJR-RDC H5AN8G8NCJR-RDC - 8Gb DDR4 SDRAM x8 2666Mbps | SK Hynix

H5AN8G8NCJR-RDC - 8Gb DDR4 SDRAM x8 2666Mbps | SK Hynix

H5AN8G8NCJR-RDC ✓ Aktif

Pengandingan Spesifikasi

Parametr H5AN8G8NCJR-RDC H5AN8G8NCJR-UHC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density 8 Gb (1 GB) 8 Gb
Organisasi x8 1G x 8
Kadar Data up to 2666 Mbps —
Tegangan Pemberi Arus 1.2 V (VDD) —
Antaramuka DDR4 (JEDEC standard) —
Bank Architecture 4 bank groups x 4 banks —
Burst Length BL8 —
Kemasan 78-ball FBGA FBGA-78
Jenis Pemasangan Surface Mount Surface Mount (BGA)
Suhu Operasi [DATA_NEEDED: operating temperature range for -RDC suffix] [DATA_NEEDED: operating temperature range]
Latensi CAS [DATA_NEEDED: CAS latency for -RDC speed grade] —
Generation C-die family (NCJR) —
Lead Free Yes —
Boson Bebas Yes —
Status RoHS Compliant —
Speed Grade — DDR4-2400 (PC4-19200)
Supply Voltage (VDD) — 1.2 V
RoHS Code — Yes
REACH Compliance — Yes (per distributor record)
Lead-Free — Yes (family documented as Lead-Free & Halogen-Free)
Boson Bebas — Yes
Part Life Cycle Code — Active
Access Type — Synchronous, both clock edges (DDR)
Memory Configuration — Bank-group architecture DDR4
Die Revision — CJR (C-die family)
Manufacturer — SK hynix Inc.

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