H5AN8G8NCJR-RDC vs H5AN8G8NCJR-UHC 比較

詳細並排比較 H5AN8G8NCJR-RDC 由 SK hynix 與 H5AN8G8NCJR-UHC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN8G8NCJR-RDC H5AN8G8NCJR-RDC - 8Gb DDR4 SDRAM x8 2666Mbps | SK Hynix

H5AN8G8NCJR-RDC - 8Gb DDR4 SDRAM x8 2666Mbps | SK Hynix

H5AN8G8NCJR-RDC ✓ 啟用中
SK hynix
H5AN8G8NCJR-UHC H5AN8G8NCJR-UHC - 8Gb DDR4-2400 SDRAM FBGA-78 | SK hynix

H5AN8G8NCJR-UHC - 8Gb DDR4-2400 SDRAM FBGA-78 | SK hynix

H5AN8G8NCJR-UHC ✓ 啟用中

規格比較

參數 H5AN8G8NCJR-RDC H5AN8G8NCJR-UHC
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gb (1 GB) 8 Gb
組織 x8 1G x 8
資料速率 up to 2666 Mbps —
供應電壓 1.2 V (VDD) —
介面 DDR4 (JEDEC standard) —
Bank Architecture 4 bank groups x 4 banks —
Burst Length BL8 —
封裝 78-ball FBGA FBGA-78
安裝類型 Surface Mount Surface Mount (BGA)
工作溫度 [DATA_NEEDED: operating temperature range for -RDC suffix] [DATA_NEEDED: operating temperature range]
CAS 延遲 [DATA_NEEDED: CAS latency for -RDC speed grade] —
Generation C-die family (NCJR) —
Lead Free Yes —
無鹵素 Yes —
RoHS 狀態 Compliant —
Speed Grade — DDR4-2400 (PC4-19200)
Supply Voltage (VDD) — 1.2 V
RoHS Code — Yes
REACH Compliance — Yes (per distributor record)
Lead-Free — Yes (family documented as Lead-Free & Halogen-Free)
無鹵素 — Yes
Part Life Cycle Code — Active
Access Type — Synchronous, both clock edges (DDR)
Memory Configuration — Bank-group architecture DDR4
Die Revision — CJR (C-die family)
Manufacturer — SK hynix Inc.

資料表與資源

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