H5TC4G63AFR-PBI vs H5TC4G63CFR-PBA Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63AFR-PBI disebabkan oleh SK hynix dan H5TC4G63CFR-PBA disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5TC4G63AFR-PBI H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI Obsolete
SK hynix
H5TC4G63CFR-PBA H5TC4G63CFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-PBA ✓ Aktif

Pengandingan Spesifikasi

Parametr H5TC4G63AFR-PBI H5TC4G63CFR-PBA
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Obsolete Aktif
Harga Unit (USD) — $6.23
Jenis Ingatan DDR3L SDRAM DDR3L SDRAM
Organisasi 256M x 16 256M x 16
Total Memory Size 4 Gb —
Kadar Data DDR3-1600 (PC3L-12800) —
Tegangan Pemberi Arus 1.35 V —
Number of Banks 8 —
Burst Length 8 (BL8) —
Latensi CAS Programmable —
On-Die Termination (ODT) Yes —
Refresh Period 7.8 us at 85°C —
Gambaran Suhu Operasi -40°C to +95°C —
Kemasan 96-ball FBGA (TFBGA, BGA96, 9x16, 32) 96-ball FBGA (PBGA96)
Jenis Pemasangan Surface Mount —
Number of Terminals 96 —
Status RoHS Compliant —
Density — 4Gb
Supply Voltage (VDD/VDDQ) — 1.35V +0.100/-0.067V
Clock Input — Fully differential (CK, CK)
Data Strobe — Differential (DQS, DQS)
On-chip DLL — Yes
Data Mask (DM) — Yes
Auto Precharge — Yes
Auto Self-Refresh — Yes
Dynamic ODT — Yes
ZQ Calibration — Yes
Write Leveling — Yes
Asynchronous Reset — Yes
RoHS — Compliant
Boson Bebas — Yes
Lead-Free — Yes

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