H9JCNNNBK3MLYR-N6E vs H9JCNNNBK3MLYR-N6E-SK Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H9JCNNNBK3MLYR-N6E disebabkan oleh SK hynix dan H9JCNNNBK3MLYR-N6E-SK disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
SK hynix
H9JCNNNBK3MLYR-N6E-SK - 16Gb LPDDR5-6400 SDRAM | SK Hynix | TFBGA-315
H9JCNNNBK3MLYR-N6E-SK ✓ AktifPengandingan Spesifikasi
| Parametr | H9JCNNNBK3MLYR-N6E | H9JCNNNBK3MLYR-N6E-SK |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $24.37 | — |
| Jenis Ingatan | LPDDR5 SDRAM | Volatile - DRAM (LPDDR5 SDRAM) |
| Density | 16 Gb (2 GB) | 16 Gb (2 GB) |
| Organisasi | 512M x 32 | 512M x 32 |
| Kadar Data | 6400 Mbps per pin | 6400 Mbps (LPDDR5-6400) |
| Supply Voltage (VDD2) | 1.05 V | — |
| Supply Voltage (VDD1) | [DATA_NEEDED: VDD1 rail voltage] | — |
| Supply Voltage (VDDQ) | [DATA_NEEDED: VDDQ rail voltage] | — |
| Kemasan | TFBGA-315 | 315-ball TFBGA (12 x 12 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Number of Channels | Dual channel (x16 + x16) | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | -55C to +125C |
| Status RoHS | Compliant | Compliant |
| Memory Technology | DRAM (volatile) | — |
| Refresh Mode | [DATA_NEEDED: refresh mode support] | — |
| On-Die Termination | [DATA_NEEDED: ODT support] | — |
| Bank Architecture | [DATA_NEEDED: bank group configuration] | — |
| Aras MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Bus Width | — | 16-bit |
| Channel Architecture | — | Dual-channel (per datasheet family) |
| VDD (Core Supply) | — | 1.05 V (range 1.01 V to 1.12 V) |
| VDDQ (I/O Supply) | — | 1.8 V (range 1.7 V to 1.95 V) |
| JEDEC Standard | — | JESD209-5 (LPDDR5) |
| On-die ECC | — | Yes (per LPDDR5 base spec) |