IAUC41N06S5N102ATMA1 vs IAUC41N06S5L Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC41N06S5N102ATMA1 disebabkan oleh Infineon dan IAUC41N06S5L disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUC41N06S5N102ATMA1 IAUC41N06S5L
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 Power-Transistor —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Tc) 47 A (Tj) —
Power Dissipation (PD, Tc=25C) 42 W —
On-Resistance (RDS(on)) 10.2 mΩ at VGS=10 V, ID=20 A —
Gate-Source Threshold (VGS(th)) 3.4 V (typical) —
Total Gate Charge (QG) 12.5 nC —
Kemasan PG-TDSON-8-33 (SSO8) Surface Mount TDSON-8 (PG-TDSON-8)
Gambaran Suhu Operasi -55C to +175C (junction) —
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per Infineon automotive MOSFET family) AEC-Q101
Status RoHS Compliant Compliant (Green Product)
Channel Polarity N-Channel (single) —
Part Number — IAUC41N06S5L
Technology — OptiMOS-5 trench MOSFET
Drain-Source Voltage (V<sub>DS</sub>) — 60 V
Continuous Drain Current (I<sub>D</sub>) — [DATA_NEEDED: I_D max value]
R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V — 10 mΩ typical
R<sub>DS(on)</sub> at V<sub>GS</sub>=4.5 V — [DATA_NEEDED: RDS(on) at 4.5 V]
Gate Threshold Voltage (V<sub>GS(th)</sub>) — Logic-level (around 1.7 V typical)
Maximum Operating Junction Temperature — 175 °C
MSL (Moisture Sensitivity Level) — MSL1 (up to 260 °C peak reflow)
Channel Type — N-channel, Enhancement mode
Lead-Free — Yes
Gate-Source Voltage (V<sub>GS</sub>) max — [DATA_NEEDED: V_GS max absolute rating]

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