IAUCN04S6N009TATMA1 vs IAUCN04S7N009ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S6N009TATMA1 disebabkan oleh Infineon dan IAUCN04S7N009ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUCN04S7N009ATMA1 IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUCN04S6N009TATMA1 IAUCN04S7N009ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 6 40 V —
Part Number IAUCN04S6N009T —
Ordering Code (MPN) IAUCN04S6N009TATMA1 —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, at Tj) 330 A —
Power Dissipation (PD, at Tc) 178 W —
On-Resistance RDS(on) max 0.9 mΩ —
Kemasan PG-LHDSO-10-2 (SSO10T) PG-TDSON-8-34 (Surface Mount)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 6 trench MOSFET MOSFET (Metal Oxide)
Automotive Qualification AEC-Q101 —
Lead-Free / RoHS Yes / Compliant —
Gate Threshold VGS(th) typ [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge Qg typ [DATA_NEEDED: total gate charge] —
Series — OptiMOS 7
FET Type — N-Channel
Drain-to-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D) — 175 A
R_DS(on) Max @ V_GS = 10 V — 0.96 mΩ
Gate Drive Voltage (V_GS) — 10 V
Suhu Operasi — -55C to +175C
Qualification — AEC-Q101 (Automotive)
Aras MSL — 1
Status RoHS — Compliant
Configuration — Single N-Channel
Supplier Device Package — PG-TDSON-8-34

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