IAUCN04S6N009TATMA1 vs IAUCN04S7N009ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN04S6N009TATMA1 sa pamamagitan ng Infineon at IAUCN04S7N009ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN04S6N009TATMA1 - 40V 0.9mΩ OptiMOS 6 Auto MOSFET | Infineon
IAUCN04S6N009TATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN04S6N009TATMA1 | IAUCN04S7N009ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40 V | — |
| Part Number | IAUCN04S6N009T | — |
| Ordering Code (MPN) | IAUCN04S6N009TATMA1 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, at Tj) | 330 A | — |
| Power Dissipation (PD, at Tc) | 178 W | — |
| On-Resistance RDS(on) max | 0.9 mΩ | — |
| Packhaging | PG-LHDSO-10-2 (SSO10T) | PG-TDSON-8-34 (Surface Mount) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 trench MOSFET | MOSFET (Metal Oxide) |
| Automotive Qualification | AEC-Q101 | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| Gate Threshold VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Series | — | OptiMOS 7 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 175 A |
| R_DS(on) Max @ V_GS = 10 V | — | 0.96 mΩ |
| Gate Drive Voltage (V_GS) | — | 10 V |
| Temperature na Operasyon | — | -55C to +175C |
| Qualification | — | AEC-Q101 (Automotive) |
| Level ng MSL | — | 1 |
| Tindminan RoHS | — | Compliant |
| Configuration | — | Single N-Channel |
| Supplier Device Package | — | PG-TDSON-8-34 |