IAUCN04S7L009ATMA1 vs IAUCN04S7N027GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7L009ATMA1 disebabkan oleh Infineon dan IAUCN04S7N027GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN04S7L009ATMA1 IAUCN04S7N027GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUCN04S7L009ATMA1 —
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS™ 7 (trench-gate) —
Drain-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id, Tc=25°C) 275 A (Tj) —
Continuous Drain Current (Id, Tc=100°C) 175 A —
Power Dissipation (Pd, Tc=25°C) 129 W —
Rds(on) Max @ Vgs=10V 0.91 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] [DATA_NEEDED: Vgs(th)]
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Kemasan PG-TDSON-8-34 (TDSON EP) —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 °C to +175 °C (Tj) [DATA_NEEDED: operating temperature range]
Automotive Qualification AEC-Q101 qualified —
Aras MSL 1 [DATA_NEEDED: MSL]
Status RoHS Compliant Compliant
Product Family — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (Vds max) — 40 V
Continuous Drain Current (Id) — 117 A
On-Resistance (Rds(on) max) — 2.67 mOhm
Power Dissipation (Pd) — 70 W (Tc)
Kemasan / Case — PG-THSOG-4-1 (SSO4G 5x6)
Qualification — Automotive
Gate-Source Voltage Max (Vgs) — [DATA_NEEDED: Vgs max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Substrate Compatibility — IMS substrates and legacy FR-4

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