IAUCN04S7N012ATMA1 vs BSC094N06LS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N012ATMA1 disebabkan oleh Infineon dan BSC094N06LS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IAUCN04S7N012ATMA1 | BSC094N06LS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS-7 (trench) | OptiMOS™ 5 (logic-level) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A | 47 A |
| On-State Resistance RDS(on) max at VGS=10V | 1.2 mΩ | — |
| On-State Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg typ] |
| Gambaran Suhu Operasi | -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet] | — |
| Kemasan | PG-TDSON-8-34 (8-PowerTDFN) | PG-TDSON-8-6 (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Transistor Grade | Automotive (AEC-Q101) | — |
| Pembuangan Kuasa (Ptot) | [DATA_NEEDED: Ptot at TC=25°C] | — |
| Thermal Resistance RθJA | [DATA_NEEDED: RθJA on JEDEC PCB] | — |
| Status RoHS | Compliant | Compliant |
| Boson Bebas | Yes | — |
| Aras MSL | 1 | [DATA_NEEDED: MSL level] |
| Polarity | N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC094N06LS5ATMA1 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | — | 9.4 mΩ |
| RDS(on) max at VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Power Dissipation (PD) at TC=25°C | — | 36 W |
| Suhu Hubungan Operasi | — | -55 °C to +150 °C |