IAUCN04S7N012ATMA1 vs BSC094N06LS5ATMA1 比較

詳細並排比較 IAUCN04S7N012ATMA1 由 Infineon 與 BSC094N06LS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUCN04S7N012ATMA1 IAUCN04S7N012ATMA1 - 40V 1.2mΩ 120A N-Ch MOSFET | Infineon

IAUCN04S7N012ATMA1 - 40V 1.2mΩ 120A N-Ch MOSFET | Infineon

IAUCN04S7N012ATMA1 ✓ 啟用中

規格比較

參數 IAUCN04S7N012ATMA1 BSC094N06LS5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel MOSFET —
Technology OptiMOS-7 (trench) OptiMOS™ 5 (logic-level)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25°C 120 A 47 A
On-State Resistance RDS(on) max at VGS=10V 1.2 mΩ —
On-State Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typ/range]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] [DATA_NEEDED: Qg typ]
工作溫度範圍 -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet] —
封裝 PG-TDSON-8-34 (8-PowerTDFN) PG-TDSON-8-6 (SuperSO8 5x6)
安裝類型 Surface Mount Surface Mount
Transistor Grade Automotive (AEC-Q101) —
功率耗散 (Ptot) [DATA_NEEDED: Ptot at TC=25°C] —
Thermal Resistance RθJA [DATA_NEEDED: RθJA on JEDEC PCB] —
RoHS 狀態 Compliant Compliant
無鹵素 Yes —
MSL 等級 1 [DATA_NEEDED: MSL level]
Polarity N-Channel —
Manufacturer — Infineon Technologies
Part Number — BSC094N06LS5ATMA1
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
RDS(on) max at VGS=10 V — 9.4 mΩ
RDS(on) max at VGS=4.5 V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Power Dissipation (PD) at TC=25°C — 36 W
工作接面溫度 — -55 °C to +150 °C

資料表與資源

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