IAUCN04S7N019GATMA1 vs IAUCN04S7L009ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N019GATMA1 disebabkan oleh Infineon dan IAUCN04S7L009ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN04S7N019GATMA1 IAUCN04S7L009ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tj) 147 A —
On-Resistance RDS(on) typical 1.95 mOhm —
Maximum Power Dissipation (Tc) 81 W —
Kemasan PG-THSOG-4-1 (SSO4G 5x6 mm) PG-TDSON-8-34 (TDSON EP)
Jenis Pemasangan Surface Mount Surface Mount
Substrate Compatibility IMS substrates and legacy PCB —
Automotive Qualification AEC-Q101 (per family datasheet) AEC-Q101 qualified
Status RoHS Compliant Compliant
Lead-Free Yes —
Tape and Reel Packaging Yes (per ATMA1 suffix) —
Gambaran Suhu Operasi [DATA_NEEDED: junction temperature range from datasheet] -55 °C to +175 °C (Tj)
Part Number — IAUCN04S7L009ATMA1
Technology — OptiMOS™ 7 (trench-gate)
Drain-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id, Tc=25°C) — 275 A (Tj)
Continuous Drain Current (Id, Tc=100°C) — 175 A
Power Dissipation (Pd, Tc=25°C) — 129 W
Rds(on) Max @ Vgs=10V — 0.91 mΩ
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical value]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Aras MSL — 1

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