IAUCN04S7N019GATMA1 vs IAUCN04S7L009ATMA1 比較

詳細並排比較 IAUCN04S7N019GATMA1 由 Infineon 與 IAUCN04S7L009ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IAUCN04S7N019GATMA1 IAUCN04S7L009ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
電晶體類型 N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tj) 147 A —
On-Resistance RDS(on) typical 1.95 mOhm —
Maximum Power Dissipation (Tc) 81 W —
封裝 PG-THSOG-4-1 (SSO4G 5x6 mm) PG-TDSON-8-34 (TDSON EP)
安裝類型 Surface Mount Surface Mount
Substrate Compatibility IMS substrates and legacy PCB —
Automotive Qualification AEC-Q101 (per family datasheet) AEC-Q101 qualified
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
Tape and Reel Packaging Yes (per ATMA1 suffix) —
工作溫度範圍 [DATA_NEEDED: junction temperature range from datasheet] -55 °C to +175 °C (Tj)
Part Number — IAUCN04S7L009ATMA1
Technology — OptiMOS™ 7 (trench-gate)
Drain-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id, Tc=25°C) — 275 A (Tj)
Continuous Drain Current (Id, Tc=100°C) — 175 A
Power Dissipation (Pd, Tc=25°C) — 129 W
Rds(on) Max @ Vgs=10V — 0.91 mΩ
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical value]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
MSL 等級 — 1

資料表與資源

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