IAUCN08S7N024TATMA1 vs IAUCN08S7L033ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN08S7N024TATMA1 disebabkan oleh Infineon dan IAUCN08S7L033ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN08S7N024TATMA1 IAUCN08S7L033ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 Automotive OptiMOS 7
FET Type N-Channel —
Technology MOSFET (Metal Oxide Semiconductor) OptiMOS 7 trench MOSFET
Drain-Source Voltage (Vds) 80 V —
Continuous Drain Current (Id) at Tj 165 A —
Power Dissipation (Pd) at Tc 157 W —
Rds(on) Max at Vgs=10V 2.44 mOhm —
Kemasan / Case PG-LHDSO-10-1 (SSO10T, 5x7 mm²) —
Jenis Pemasangan Surface Mount Surface Mount
Cooling Top-side cooled —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] -55°C to +175°C (TJ)
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
Gate Threshold (Vgs(th)) [DATA_NEEDED: Vgs(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typ] —
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tj — 130 A
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C — 118 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate-Source Voltage (VGS) max — ±20 V (typical Infineon OptiMOS 7 limit)
Kemasan — PG-TDSON-8-34 (SSO8, 5x6 mm²)
Qualification — Automotive Grade (per Infineon datasheet header)
Aras MSL — 1 (per JEDEC J-STD-020, typical for this package)

Laporan Datasheet & Sumber

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