IAUCN08S7N024TATMA1 vs IAUCN08S7L033ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN08S7N024TATMA1 sa pamamagitan ng Infineon at IAUCN08S7L033ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN08S7N024TATMA1 - 80V 2.44mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N024TATMA1 ✓ NakahandaInfineon
IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN08S7N024TATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | Automotive OptiMOS 7 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide Semiconductor) | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (Vds) | 80 V | — |
| Continuous Drain Current (Id) at Tj | 165 A | — |
| Power Dissipation (Pd) at Tc | 157 W | — |
| Rds(on) Max at Vgs=10V | 2.44 mOhm | — |
| Packhaging / Kaso | PG-LHDSO-10-1 (SSO10T, 5x7 mm²) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Cooling | Top-side cooled | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -55°C to +175°C (TJ) |
| Automotive Qualification | AEC-Q101 | — |
| Tindminan RoHS | Compliant | Compliant |
| Gate Threshold (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ] | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Packhaging | — | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |
| Level ng MSL | — | 1 (per JEDEC J-STD-020, typical for this package) |