IAUCN10S7N074ATMA1 vs IAUCN08S7L033ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S7N074ATMA1 disebabkan oleh Infineon dan IAUCN08S7L033ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN10S7N074ATMA1 IAUCN08S7L033ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS™ 7 (Shielded-Gate Trench) OptiMOS 7 trench MOSFET
Drain-Source Voltage (V<sub>DS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>) 78 A (Tj) —
Power Dissipation (P<sub>D</sub>) 96 W (Tc) —
R<sub>DS(on)</sub> (typ at V<sub>GS</sub>=10 V) 7.4 mΩ —
Gate-Source Voltage (V<sub>GS</sub>) ±20 V —
Gambaran Suhu Operasi -55 °C to +175 °C -55°C to +175°C (TJ)
Kemasan PG-TDSON-8-34 (TDSON EP, 5x6 mm) PG-TDSON-8-34 (SSO8, 5x6 mm²)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 (with exposed pad) —
Aras MSL MSL2 (1 year) 1 (per JEDEC J-STD-020, typical for this package)
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
Lead-Free Yes —
Application 48 V Automotive Systems —
Manufacturer — Infineon Technologies
Series — Automotive OptiMOS 7
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tj — 130 A
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C — 118 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate-Source Voltage (VGS) max — ±20 V (typical Infineon OptiMOS 7 limit)
Qualification — Automotive Grade (per Infineon datasheet header)

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