IAUT300N08S5N011ATMA1 vs IPT012N08N5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUT300N08S5N011ATMA1 disebabkan oleh Infineon dan IPT012N08N5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUT300N08S5N011ATMA1 IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET

IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET

IAUT300N08S5N011ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUT300N08S5N011ATMA1 IPT012N08N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 5 (trench MOSFET) OptiMOS 5
Drain-Source Voltage (V_DS) 80 V —
Continuous Drain Current (I_D, T_C=25C) 300 A —
Pulsed Drain Current (I_DM) 410 A (Tj) —
R_DS(on) max 1.10 mOhm at V_GS=10 V —
Gate Threshold Voltage (V_GS(th)) 3.8 V —
Total Gate Charge (Q_g) 231 nC at V_GS=10 V —
Input Capacitance (C_iss) 16.25 nF —
Output Capacitance (C_oss) 2.6 nF —
Reverse Transfer Capacitance (C_rss) 130 pF —
Power Dissipation (P_D) 375 W at T_C=25C —
Gambaran Suhu Operasi -55C to +175C -55C to +175C (TJ max)
Kemasan PG-HSOF-8-1 (TOLL 10x12 mm) PG-HSOF-8 (TOLL)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 —
Qualification Automotive (AEC-Q101) JEDEC JESD47, JESD22, J-STD-020 (industrial)
Manufacturer — Infineon Technologies
Part Number — IPT012N08N5ATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID, TC) — 300 A
Pulsed Drain Current (IDM) — 400 A
On-Resistance RDS(on) Max — 1.2 mOhm
Total Gate Charge QG — 208 nC
Gate-to-Drain Charge QGD — 178 nC
Power Dissipation (PD, TC) — 375 W
Status RoHS — Compliant

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