IAUT300N08S5N011ATMA1 vs IPT012N08N5ATMA1 比較

詳細並排比較 IAUT300N08S5N011ATMA1 由 Infineon 與 IPT012N08N5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUT300N08S5N011ATMA1 IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET

IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET

IAUT300N08S5N011ATMA1 ✓ 啟用中
Infineon
IPT012N08N5ATMA1 IPT012N08N5ATMA1 - 80V 300A OptiMOS 5 N-Ch MOSFET | Infineon

IPT012N08N5ATMA1 - 80V 300A OptiMOS 5 N-Ch MOSFET | Infineon

IPT012N08N5ATMA1 ✓ 啟用中

規格比較

參數 IAUT300N08S5N011ATMA1 IPT012N08N5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology OptiMOS 5 (trench MOSFET) OptiMOS 5
Drain-Source Voltage (V_DS) 80 V —
Continuous Drain Current (I_D, T_C=25C) 300 A —
Pulsed Drain Current (I_DM) 410 A (Tj) —
R_DS(on) max 1.10 mOhm at V_GS=10 V —
Gate Threshold Voltage (V_GS(th)) 3.8 V —
Total Gate Charge (Q_g) 231 nC at V_GS=10 V —
Input Capacitance (C_iss) 16.25 nF —
Output Capacitance (C_oss) 2.6 nF —
Reverse Transfer Capacitance (C_rss) 130 pF —
Power Dissipation (P_D) 375 W at T_C=25C —
工作溫度範圍 -55C to +175C -55C to +175C (TJ max)
封裝 PG-HSOF-8-1 (TOLL 10x12 mm) PG-HSOF-8 (TOLL)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 —
Qualification Automotive (AEC-Q101) JEDEC JESD47, JESD22, J-STD-020 (industrial)
Manufacturer — Infineon Technologies
Part Number — IPT012N08N5ATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID, TC) — 300 A
Pulsed Drain Current (IDM) — 400 A
On-Resistance RDS(on) Max — 1.2 mOhm
Total Gate Charge QG — 208 nC
Gate-to-Drain Charge QGD — 178 nC
Power Dissipation (PD, TC) — 375 W
RoHS 狀態 — Compliant

資料表與資源

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