IAUZ18N10S5L420ATMA1 vs IAUCN10S5L280DATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ18N10S5L420ATMA1 disebabkan oleh Infineon dan IAUCN10S5L280DATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon
IAUZ18N10S5L420ATMA1 ✓ AktifInfineon
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUZ18N10S5L420ATMA1 | IAUCN10S5L280DATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 100V | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 18 A | — |
| On-Resistance RDS(on) max at VGS=10V | 42 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V to 2.7 V | — |
| Total Gate Charge (Qg) typ. | 8.5 nC | — |
| Power Dissipation (PD) at TC=25°C | 30 W | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Kemasan | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm | PG-TDSON-8-61 (SSO8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Technology | OptiMOS 5 trench | OptiMOS 5 Trench MOSFET |
| Configuration | Single with built-in diode | Dual N-Channel MOSFET Array |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | 1 |
| Product Family | — | OptiMOS 5 |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tj | — | 23 A |
| Power Dissipation (Pd) at Tc | — | 38 W |
| Automotive Qualified | — | Yes (AEC-Q101, IAU prefix) |
| Gambaran Suhu Operasi | — | -55C to +175C (junction) |
| Kiraan Pin | — | 8 |
| Packing | — | Tape & Reel (T&R) |