IAUZ30N08S5N186ATMA1 vs IAUC50N08S5L096ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ30N08S5N186ATMA1 disebabkan oleh Infineon dan IAUC50N08S5L096ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N08S5N186ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUZ30N08S5N186ATMA1 | IAUC50N08S5L096ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 5 N-Channel Power MOSFET (trench) | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID, Tj) | 30 A | — |
| Power Dissipation (PD, Tc) | 41 W | — |
| On-State Resistance (RDS(on)) | 18.6 mΩ (typical, VGS = 10 V) | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C (automotive) | -55°C to +175°C |
| Kemasan | PG-TSDSON-8-32 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Aras MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) | — | 50 A (Tc) |
| Pulsed Drain Current (IDM) | — | 200 A |
| On-Resistance (RDS(on)) | — | 9.6 mΩ max @ VGS=10V, ID=25A |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Power Dissipation (PD) | — | 60 W (Tc) |
| Lead-Free | — | Yes |