IAUZ30N08S5N186ATMA1 vs IAUCN08S7N024ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ30N08S5N186ATMA1 disebabkan oleh Infineon dan IAUCN08S7N024ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUZ30N08S5N186ATMA1 IAUCN08S7N024ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 N-Channel Power MOSFET (trench) OptiMOS 7 trench
Drain-Source Voltage (VDS) 80 V 80 V
Continuous Drain Current (ID, Tj) 30 A —
Power Dissipation (PD, Tc) 41 W —
On-State Resistance (RDS(on)) 18.6 mΩ (typical, VGS = 10 V) —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) [DATA_NEEDED: Qg at VGS=10V] —
Gambaran Suhu Operasi -55 °C to +175 °C (automotive) -55C to +175C (typical automotive)
Kemasan PG-TSDSON-8-32 (5x6 mm) PG-TDSON-8-34 (8-pin, exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Status RoHS Compliant —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen-free status] —
Manufacturer — Infineon Technologies
Series — Automotive OptiMOS 7 (80 V)
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25C — 165 A
Drain-Source On-Resistance (RDS(on)) max — 2.4 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Pembuangan Kuasa (Ptot) — [DATA_NEEDED: Ptot @ TC=25C]
RoHS Compliance — Compliant
Typical Application — 48 V automotive DC-DC, motor drive, load switch

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