IAUZ40N10S5N130ATMA1 vs IPD068N10N3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ40N10S5N130ATMA1 disebabkan oleh Infineon dan IPD068N10N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N10S5N130ATMA1 ✓ AktifInfineon
IPD068N10N3GATMA1 - 100V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD068N10N3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUZ40N10S5N130ATMA1 | IPD068N10N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUZ40N10S5N130ATMA1 | IPD068N10N3GATMA1 |
| Technology | OptiMOS 5 (super-junction trench) | OptiMOS 3 (N-Channel, Enhancement Mode) |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc=25°C | 40 A | — |
| Pulsed Drain Current (IDM) | 160 A | — |
| RDS(on) max at VGS=10V | 13 mΩ | — |
| RDS(on) typical | 10 mΩ | — |
| Maximum Power Dissipation (Tc) | 68 W | — |
| Kemasan | PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm | PG-TO252-3 (DPAK, 2 leads + tab) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55°C to +175°C (TJ) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead-Free / RoHS | ROHS3 Compliant | — |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| On-Resistance RDS(on) max | — | 6.8 mOhm |
| Power Dissipation (PD) at Tc | — | 150 W |
| Gate Threshold Voltage VGS(th) | — | 2.0 V to 4.0 V (typical) |
| Suhu Hubungan Operasi | — | -55 C to +175 C |
| Channel Type | — | N-Channel |
| Configuration | — | Single |
| Status RoHS | — | Compliant |
| Aras MSL | — | 1 |
| Packing | — | Tape & Reel (T/R) |
| Qualification | — | Industrial (non-automotive) |