IAUZ40N10S5N130ATMA1 vs IPD068N10N3GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUZ40N10S5N130ATMA1 sa pamamagitan ng Infineon at IPD068N10N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUZ40N10S5N130ATMA1 IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ40N10S5N130ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUZ40N10S5N130ATMA1 IPD068N10N3GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUZ40N10S5N130ATMA1 IPD068N10N3GATMA1
Technology OptiMOS 5 (super-junction trench) OptiMOS 3 (N-Channel, Enhancement Mode)
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc=25°C 40 A —
Pulsed Drain Current (IDM) 160 A —
RDS(on) max at VGS=10V 13 mΩ —
RDS(on) typical 10 mΩ —
Maximum Power Dissipation (Tc) 68 W —
Packhaging PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm PG-TO252-3 (DPAK, 2 leads + tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55°C to +175°C (TJ) —
Automotive Qualification AEC-Q101 qualified —
Lead-Free / RoHS ROHS3 Compliant —
Continuous Drain Current (ID) at Tc — 90 A
On-Resistance RDS(on) max — 6.8 mOhm
Power Dissipation (PD) at Tc — 150 W
Gate Threshold Voltage VGS(th) — 2.0 V to 4.0 V (typical)
Temperature ng Junction na Operasyon — -55 C to +175 C
Channel Type — N-Channel
Configuration — Single
Tindminan RoHS — Compliant
Level ng MSL — 1
Packing — Tape & Reel (T/R)
Qualification — Industrial (non-automotive)

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