IKD06N60RATMA1 vs IGD06N60TATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IKD06N60RATMA1 disebabkan oleh Infineon dan IGD06N60TATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IGD06N60TATMA1 IGD06N60TATMA1 - 600V 6A TRENCHSTOP IGBT3 | Infineon

IGD06N60TATMA1 - 600V 6A TRENCHSTOP IGBT3 | Infineon

IGD06N60TATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IKD06N60RATMA1 IGD06N60TATMA1
Merek Infineon Infineon
Kategori IGBTs Transistors
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor IGBT - Trench Field Stop with anti-parallel diode —
Configuration Single with built-in diode —
Collector-Emitter Voltage (VCE) 600 V 600 V
Continuous Collector Current (IC) at TC=25C 12 A —
Pulsed Collector Current (ICM) [DATA_NEEDED: pulsed collector current] —
Maximum Power Dissipation 100 W —
Gate-Emitter Voltage (VGE) [DATA_NEEDED: VGE max rating] ±20 V
Technology TRENCHSTOP RC-IGBT3 (Reverse Conducting) —
VCE(sat) at IC=6A, VGE=15V [DATA_NEEDED: VCE(sat) typical] —
Diode Forward Voltage (VF) at IF=6A [DATA_NEEDED: VF typical] —
Gambaran Suhu Operasi -40C to +150C (junction) —
Kemasan PG-TO252-3 (DPAK) PG-TO252-3-11 (DPAK / TO-252)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (2 + Tab) —
Status RoHS Compliant Compliant
Automotive Qualified Yes (per FindIC listing) —
Switching Frequency Range (typical) 4 kHz to 20 kHz (hard-switching) —
Manufacturer — Infineon Technologies
Series — TRENCHSTOP IGBT3
IGBT Type — Trench Field Stop
Continuous Collector Current (IC) at TC=25°C — 12 A
Continuous Collector Current (IC) at TC=100°C — 6 A
Maximum Pulsed Collector Current (ICM) — 18 A (per datasheet)
Maximum Power Dissipation (Ptot) — 88 W
VCE(sat) at IC=6A, VGE=15V, Tj=25°C — 1.5 V (typical)
Gate Threshold Voltage (VGE(th)) — 3.0 V min / 5.0 V max (typical 4.0 V)
Turn-on Switching Energy (Eon) — [DATA_NEEDED: Eon]
Turn-off Switching Energy (Eoff) — [DATA_NEEDED: Eoff]
Integrated Diode — Yes, soft-recovery emitter-controlled diode
Suhu Hubungan Operasi — -40 °C to +175 °C
Storage Temperature — -55 °C to +150 °C
Lead-Free — Yes

Laporan Datasheet & Sumber

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