IKD06N60RATMA1 vs IGD06N60TATMA1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma IKD06N60RATMA1 tarafından Infineon ve IGD06N60TATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Infineon
IGD06N60TATMA1 IGD06N60TATMA1 - 600V 6A TRENCHSTOP IGBT3 | Infineon

IGD06N60TATMA1 - 600V 6A TRENCHSTOP IGBT3 | Infineon

IGD06N60TATMA1 ✓ Aktif

Özellik Karşılaştırması

Parametre IKD06N60RATMA1 IGD06N60TATMA1
Marka Infineon Infineon
Kategori IGBTs Transistors
Yaşam Döngüsü Durumu Aktif Aktif
Transistor Türü IGBT - Trench Field Stop with anti-parallel diode —
Configuration Single with built-in diode —
Collector-Emitter Voltage (VCE) 600 V 600 V
Continuous Collector Current (IC) at TC=25C 12 A —
Pulsed Collector Current (ICM) [DATA_NEEDED: pulsed collector current] —
Maximum Power Dissipation 100 W —
Gate-Emitter Voltage (VGE) [DATA_NEEDED: VGE max rating] ±20 V
Technology TRENCHSTOP RC-IGBT3 (Reverse Conducting) —
VCE(sat) at IC=6A, VGE=15V [DATA_NEEDED: VCE(sat) typical] —
Diode Forward Voltage (VF) at IF=6A [DATA_NEEDED: VF typical] —
İşletim Sıcaklığı Aralığı -40C to +150C (junction) —
Paket PG-TO252-3 (DPAK) PG-TO252-3-11 (DPAK / TO-252)
Montaj Türü Surface Mount Surface Mount
Pin Sayısı 3 (2 + Tab) —
RoHS Durumu Compliant Compliant
Automotive Qualified Yes (per FindIC listing) —
Switching Frequency Range (typical) 4 kHz to 20 kHz (hard-switching) —
Manufacturer — Infineon Technologies
Series — TRENCHSTOP IGBT3
IGBT Type — Trench Field Stop
Continuous Collector Current (IC) at TC=25°C — 12 A
Continuous Collector Current (IC) at TC=100°C — 6 A
Maximum Pulsed Collector Current (ICM) — 18 A (per datasheet)
Maximum Power Dissipation (Ptot) — 88 W
VCE(sat) at IC=6A, VGE=15V, Tj=25°C — 1.5 V (typical)
Gate Threshold Voltage (VGE(th)) — 3.0 V min / 5.0 V max (typical 4.0 V)
Turn-on Switching Energy (Eon) — [DATA_NEEDED: Eon]
Turn-off Switching Energy (Eoff) — [DATA_NEEDED: Eoff]
Integrated Diode — Yes, soft-recovery emitter-controlled diode
İşletim Jant Sıcaklığı — -40 °C to +175 °C
Storage Temperature — -55 °C to +150 °C
Lead-Free — Yes

Dökümanlar & Kaynaklar

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