IMT40R011M2HXTMA1 vs ISC011N04NM7VATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IMT40R011M2HXTMA1 disebabkan oleh Infineon dan ISC011N04NM7VATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IMT40R011M2HXTMA1 ISC011N04NM7VATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family CoolSiC™ MOSFET 400 V G2 —
Drain-Source Voltage (VDS) 400 V 40 V
On-Resistance RDS(on), typ 11 mΩ —
Continuous Drain Current (Ta, 25 °C) 13.4 A —
Continuous Drain Current (Tc, case) 144 A —
Power Dissipation (Ta) 3.8 W —
Power Dissipation (Tc) 429 W —
Gate Threshold Voltage VGS(th) 4.5 V (typ, benchmark) —
Recommended Gate Drive Voltage 0 V to 18 V —
Technology Silicon Carbide (SiC) Trench MOSFET Trench MOSFET, silicon
Kemasan PG-HSOF-8-2 (surface mount) PG-TDSON-8 (source-down)
Jenis Pemasangan Surface Mount Surface Mount
Avalanche Rating 100 % avalanche tested —
Body Diode Fast body diode, low Qfr —
Interconnection Technology XT (best-in-class thermal) —
Compliance RoHS compliant (per Infineon product page) —
Product Family — OptiMOS 7 Power-Transistor
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Short-Circuit Withstand — Yes (current-limited)
Gambaran Suhu Operasi — -55 °C to +175 °C (TJ)
RoHS Compliance — Compliant (per Infineon product page)
Aras MSL — MSL 1 (per JEDEC J-STD-020)

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