IPB110P06LMATMA1 vs IPD038N06N3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB110P06LMATMA1 disebabkan oleh Infineon dan IPD038N06N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPB110P06LMATMA1 | IPD038N06N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | N-Channel MOSFET |
| Technology | OptiMOS (trench MOSFET) | OptiMOS trench MOSFET |
| Drain-Source Voltage (VDS) | -60 V | 60 V |
| Continuous Drain Current (ID) at TC=25C | -100 A | — |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | — |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | — |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | — |
| Gate-Source Voltage (VGS max) | +/-20 V | — |
| Gambaran Suhu Operasi | -55 C to +175 C (TJ) | [DATA_NEEDED: operating temperature range] |
| Kemasan / Case | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | — |
| Gate Drive Level | Logic-level compatible | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Series | — | OptiMOS 60V |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (typ) |
| On-Resistance (RDS(on)) at VGS=10V | — | 3.8 mΩ |
| Total Power Dissipation (PD) at Tc | — | 188 W |
| Kemasan | — | PG-TO252-3 (DPAK) |
| Aras MSL | — | 1 |
| Boson Bebas | — | Yes |
| Polarity | — | N-Channel |