IPB110P06LMATMA1 vs IPD038N06N3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB110P06LMATMA1 sa pamamagitan ng Infineon at IPD038N06N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD038N06N3GATMA1 - 60V 90A OptiMOS N-Channel MOSFET | Infineon
IPD038N06N3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB110P06LMATMA1 | IPD038N06N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | P-Channel | N-Channel MOSFET |
| Technology | OptiMOS (trench MOSFET) | OptiMOS trench MOSFET |
| Drain-Source Voltage (VDS) | -60 V | 60 V |
| Continuous Drain Current (ID) at TC=25C | -100 A | — |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | — |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | — |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | — |
| Gate-Source Voltage (VGS max) | +/-20 V | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (TJ) | [DATA_NEEDED: operating temperature range] |
| Packhaging / Kaso | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | — |
| Gate Drive Level | Logic-level compatible | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Series | — | OptiMOS 60V |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (typ) |
| On-Resistance (RDS(on)) at VGS=10V | — | 3.8 mΩ |
| Total Power Dissipation (PD) at Tc | — | 188 W |
| Packhaging | — | PG-TO252-3 (DPAK) |
| Level ng MSL | — | 1 |
| Wala sa Halogen | — | Yes |
| Polarity | — | N-Channel |