IPB110P06LMATMA1 vs IRF4905LPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB110P06LMATMA1 disebabkan oleh Infineon dan IRF4905LPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB110P06LMATMA1 IRF4905LPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Technology OptiMOS (trench MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) -60 V —
Continuous Drain Current (ID) at TC=25C -100 A —
Maximum Power Dissipation (PD) at TC=25C 300 W —
On-State Resistance (RDS(on) max) at VGS=10V 11 mOhm @ ID=100A —
Gate Threshold Voltage (VGS(th) max) 2 V @ ID=5.55 mA —
Gate-Source Voltage (VGS max) +/-20 V —
Gambaran Suhu Operasi -55 C to +175 C (TJ) —
Kemasan / Case PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) —
Jenis Pemasangan Surface Mount Through Hole
Supplier Device Package PG-TO263-3-2 —
Gate Drive Level Logic-level compatible —
Status RoHS Compliant —
Lead-Free Yes —
Polarity — P-Channel
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) @ Tc=25C — -74 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
On-Resistance Rds(on) max @ Vgs=-10V — 20 mOhm
Gate Threshold Voltage Vgs(th) typ — [DATA_NEEDED: Vgs(th) typical]
Gate-Source Voltage (Vgs) max — ±20 V
Total Power Dissipation (Ptot) @ Tc=25C — 200 W
Suhu Hubungan Operasi — -55C to +150C
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC value]
Rise Time (tr) typ — [DATA_NEEDED: rise time]
Fall Time (tf) typ — [DATA_NEEDED: fall time]
Kemasan — TO-262 (I2PAK), through-hole, 3-pin
Lead-Free / RoHS — Yes (PbF suffix)
Avalanche Rated — Yes

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