IPB120P04P4L03ATMA2 vs IPD50P04P413ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB120P04P4L03ATMA2 disebabkan oleh Infineon dan IPD50P04P413ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB120P04P4L03ATMA2 IPD50P04P413ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity P-Channel —
Drain-Source Voltage (VDS) 40 V -40 V
Continuous Drain Current (ID, Tc=25C) 120 A —
Power Dissipation (PD, Tc=25C) 136 W —
On-Resistance (RDS(on)) 3.1 mΩ (typ, per Infineon summary) —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] [DATA_NEEDED: VGS(th)]
Suhu Hubungan Operasi -55C to +175C —
Kemasan PG-TO263-3-2 (D2PAK) PG-TO252-3-313 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Technology Family OptiMOS-P2 —
Configuration Single P-Channel MOSFET —
Kiraan Pin 3 (Gate, Drain, Source) —
Aras MSL [DATA_NEEDED: MSL level] 1
Status RoHS Compliant (per Infineon product page) Compliant
Polarity / Device Type — P-Channel MOSFET
Technology — OptiMOS-P2 (Trench)
Continuous Drain Current (TC=25°C, ID) — 50 A
Continuous Drain Current (TC=100°C, ID) — [DATA_NEEDED: ID @ 100°C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM]
Power Dissipation (TC=25°C, Ptot) — 58 W
On-State Resistance (RDS(on)) @ VGS=-10V — 9.2 mΩ (typ) / 12.6 mΩ (max)
On-State Resistance (RDS(on)) @ VGS=-4.5V — [DATA_NEEDED: RDS(on) @ VGS=-4.5V]
Maximum Junction Temperature (TJ,max) — 175 °C
Gambaran Suhu Operasi — -55 °C to +175 °C
Standard Pack Quantity (13" reel) — 2500 pcs
Automotive Qualification — AEC-Q101 qualified

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