IPB120P04P4L03ATMA2 vs IPD50P04P413ATMA2 Comparison

Detailed side-by-side comparison of IPB120P04P4L03ATMA2 by Infineon and IPD50P04P413ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB120P04P4L03ATMA2 IPD50P04P413ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Polarity P-Channel —
Drain-Source Voltage (VDS) 40 V -40 V
Continuous Drain Current (ID, Tc=25C) 120 A —
Power Dissipation (PD, Tc=25C) 136 W —
On-Resistance (RDS(on)) 3.1 mΩ (typ, per Infineon summary) —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] [DATA_NEEDED: VGS(th)]
Operating Junction Temperature -55C to +175C —
Package PG-TO263-3-2 (D2PAK) PG-TO252-3-313 (DPAK)
Mounting Type Surface Mount Surface Mount
Technology Family OptiMOS-P2 —
Configuration Single P-Channel MOSFET —
Pin Count 3 (Gate, Drain, Source) —
MSL Level [DATA_NEEDED: MSL level] 1
RoHS Status Compliant (per Infineon product page) Compliant
Polarity / Device Type — P-Channel MOSFET
Technology — OptiMOS-P2 (Trench)
Continuous Drain Current (TC=25°C, ID) — 50 A
Continuous Drain Current (TC=100°C, ID) — [DATA_NEEDED: ID @ 100°C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM]
Power Dissipation (TC=25°C, Ptot) — 58 W
On-State Resistance (RDS(on)) @ VGS=-10V — 9.2 mΩ (typ) / 12.6 mΩ (max)
On-State Resistance (RDS(on)) @ VGS=-4.5V — [DATA_NEEDED: RDS(on) @ VGS=-4.5V]
Maximum Junction Temperature (TJ,max) — 175 °C
Operating Temperature Range — -55 °C to +175 °C
Standard Pack Quantity (13" reel) — 2500 pcs
Automotive Qualification — AEC-Q101 qualified

Datasheets & Resources

Browse All Products Create BOM Request Quote