IPB60R040CFD7ATMA1 vs IPL60R085P7AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB60R040CFD7ATMA1 disebabkan oleh Infineon dan IPL60R085P7AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB60R040CFD7ATMA1 IPL60R085P7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok In Stock —
Harga Unit (USD) $5.19 —
Manufacturer Infineon Technologies —
Product Family CoolMOS CFD7 —
Technology Superjunction (SJ) N-Channel MOSFET CoolMOS P7 superjunction (7th generation)
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25°C) 50 A 39 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Pembuangan Kuasa (TC=25°C) 227 W —
Gambaran Suhu Operasi -55°C to +150°C —
Kemasan PG-TO263-3-2 (D2PAK) PG-VSON-4 (VSON-4, source-down)
Jenis Pemasangan Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
Aras MSL 1 —
Status RoHS Compliant Compliant
Lead-Free Yes —
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
Continuous Drain Current (ID, Tc=100°C) — 24 A
Static Drain-Source On-Resistance (RDS(on)) — 85 mΩ at VGS=10 V
Gate Threshold Voltage (VGS(th)) — 3.5 V
Maximum Power Dissipation (Ptot) — 154 W
Suhu Hubungan Operasi — -40 °C to +150 °C
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
ESD Robustness (HBM) — >2 kV (all pins)
Qualification — JEDEC industrial
Polarity — N-channel

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