IPB60R040CFD7ATMA1 vs IPL60R085P7AUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB60R040CFD7ATMA1 sa pamamagitan ng Infineon at IPL60R085P7AUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ Nakahanda
Infineon
IPL60R085P7AUMA1 IPL60R085P7AUMA1 - 600V 85mΩ CoolMOS P7 MOSFET | Infineon

IPL60R085P7AUMA1 - 600V 85mΩ CoolMOS P7 MOSFET | Infineon

IPL60R085P7AUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPB60R040CFD7ATMA1 IPL60R085P7AUMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Katayuan ng Stock In Stock —
Presyo ng Yunit (USD) $5.19 —
Manufacturer Infineon Technologies —
Product Family CoolMOS CFD7 —
Technology Superjunction (SJ) N-Channel MOSFET CoolMOS P7 superjunction (7th generation)
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25°C) 50 A 39 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Pwersang Pinahihigpit (TC=25°C) 227 W —
Hanay ng Temperature na Operasyon -55°C to +150°C —
Packhaging PG-TO263-3-2 (D2PAK) PG-VSON-4 (VSON-4, source-down)
Uri ng Pagpapasok Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
Level ng MSL 1 —
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
Continuous Drain Current (ID, Tc=100°C) — 24 A
Static Drain-Source On-Resistance (RDS(on)) — 85 mΩ at VGS=10 V
Gate Threshold Voltage (VGS(th)) — 3.5 V
Maximum Power Dissipation (Ptot) — 154 W
Temperature ng Junction na Operasyon — -40 °C to +150 °C
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
ESD Robustness (HBM) — >2 kV (all pins)
Qualification — JEDEC industrial
Polarity — N-channel

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