IPC100N04S51R7ATMA1 vs IPD80R280P7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPC100N04S51R7ATMA1 disebabkan oleh Infineon dan IPD80R280P7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPC100N04S51R7ATMA1 IPD80R280P7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS-5 —
Jenis Transistor N-Channel MOSFET, Enhancement Mode N-Channel MOSFET
Drain-Source Voltage VDS 40 V —
Continuous Drain Current ID 100 A (at TC) —
Pulsed Drain Current IDM [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage VGS [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) value] —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissipation PD 115 W (at TC) —
Thermal Resistance RthJC 1.3 K/W —
Suhu Hubungan Operasi -55 °C to +175 °C -55C to +150C
Kemasan PG-TDSON-8-34 (SS08 leadless) PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (260 °C peak reflow) [DATA_NEEDED: MSL rating]
AEC-Q101 Qualified Yes —
Avalanche Tested 100% tested —
Status RoHS Compliant (Green Product) Compliant
Built-in Body Diode Yes —
Product Family — CoolMOS P7
Technology — Superjunction (CoolMOS P7)
Drain-Source Voltage (V_DS) — 800 V
Continuous Drain Current (I_D, Tc) — 17 A
R_DS(on) max at V_GS=10V — 280 mOhm
Power Dissipation (P_D, Tc) — 101 W
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max rating]
ESD Protection — Integrated (per datasheet)
Lead-Free — Yes

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