IPC100N04S51R7ATMA1 vs IPD80R280P7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPC100N04S51R7ATMA1 sa pamamagitan ng Infineon at IPD80R280P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 ✓ Nakahanda
Infineon
IPD80R280P7ATMA1 IPD80R280P7ATMA1 - 800V 280mOhm CoolMOS P7 MOSFET | Infineon

IPD80R280P7ATMA1 - 800V 280mOhm CoolMOS P7 MOSFET | Infineon

IPD80R280P7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPC100N04S51R7ATMA1 IPD80R280P7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS-5 —
Uri ng Transistor N-Channel MOSFET, Enhancement Mode N-Channel MOSFET
Drain-Source Voltage VDS 40 V —
Continuous Drain Current ID 100 A (at TC) —
Pulsed Drain Current IDM [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage VGS [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) value] —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissipation PD 115 W (at TC) —
Thermal Resistance RthJC 1.3 K/W —
Temperature ng Junction na Operasyon -55 °C to +175 °C -55C to +150C
Packhaging PG-TDSON-8-34 (SS08 leadless) PG-TO252-3 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL MSL1 (260 °C peak reflow) [DATA_NEEDED: MSL rating]
AEC-Q101 Qualified Yes —
Avalanche Tested 100% tested —
Tindminan RoHS Compliant (Green Product) Compliant
Built-in Body Diode Yes —
Product Family — CoolMOS P7
Technology — Superjunction (CoolMOS P7)
Drain-Source Voltage (V_DS) — 800 V
Continuous Drain Current (I_D, Tc) — 17 A
R_DS(on) max at V_GS=10V — 280 mOhm
Power Dissipation (P_D, Tc) — 101 W
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max rating]
ESD Protection — Integrated (per datasheet)
Lead-Free — Yes

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