IPC50N04S5L5R5ATMA1 vs IAUCN08S7L024ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPC50N04S5L5R5ATMA1 disebabkan oleh Infineon dan IAUCN08S7L024ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPC50N04S5L5R5ATMA1 IAUCN08S7L024ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Mode Enhancement Mode —
Drain-Source Voltage (VDS) 40 V 80 V
Continuous Drain Current (ID, Tc) 50 A —
Maximum Drain Current (silicon-limited, 25 °C) 60 A —
On-Resistance RDS(on) max @ VGS=10 V 5.5 mΩ —
Gate Threshold VGS(th) Logic Level (enhancement at ≤ 4.5 V VGS) —
Power Dissipation (Tc) 42 W —
Thermal Resistance Junction-to-Case RthJC 3.6 K/W —
Gambaran Suhu Operasi -55 °C to +175 °C -55C to +175C (Tj)
Kemasan PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) PG-TDSON-8-34 (SSO8 5x6 mm²)
Jenis Pemasangan Surface Mount Surface Mount
AEC-Q101 Qualification Qualified (automotive grade) —
MSL (Moisture Sensitivity Level) MSL1 —
Peak Reflow Temperature 260 °C —
Avalanche Rating 100 % Avalanche Tested —
RoHS / REACH RoHS Compliant (Green Product) —
Technology — OptiMOS™ 7 N-channel trench MOSFET
Continuous Drain Current (ID) — 177 A (Tj)
Continuous Drain Current (Silicon-limited) — 150 A
On-Resistance RDS(on) max — 2.4 mΩ at VGS=10 V
Power Dissipation (PD) — 148 W (Tc)
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg typ]
Avalanche Energy Rated — Yes (single-pulse)
Automotive Qualification — AEC-Q101 qualified
Status RoHS — Compliant
Aras MSL — MSL1 (per JEDEC J-STD-020)

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