IPD046N08N5ATMA1 vs IPD90N04S403ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD046N08N5ATMA1 disebabkan oleh Infineon dan IPD90N04S403ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD046N08N5ATMA1 | IPD90N04S403ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS™ 5 80V | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) at Tc=25°C | 90 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 4.6 mΩ | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Power Dissipation (PD) at Tc=25°C | 125 W | — |
| Gambaran Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Kemasan / Case | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS™ 5 trench MOSFET | Trench MOSFET (OptiMOS-T2) |
| Status RoHS | ROHS3 Compliant | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | MSL1 (peak reflow up to 260C) |
| Configuration | Single N-channel, 3-pin (Gate / Drain tab / Source) | — |
| Product Family | — | OptiMOS-T2 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 90 A |
| On-State Resistance (R_DS(on)) | — | 3.2 mOhm typical at V_GS = 10 V |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 94 W |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Kemasan | — | PG-TO252-3-313 (DPAK) |
| Suhu Hubungan Operasi | — | -55C to +175C |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| Avalanche Tested | — | 100% avalanche-tested |
| RoHS Compliance | — | Compliant (Green Package) |