IPD320N20N3GATMA1 vs IRL40S212ARMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD320N20N3GATMA1 disebabkan oleh Infineon dan IRL40S212ARMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD320N20N3GATMA1 - 200V 34A OptiMOS3 N-Channel MOSFET | Infineon
IPD320N20N3GATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IPD320N20N3GATMA1 | IRL40S212ARMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 3 | StrongIRFET™ (planar N-channel) |
| Drain-Source Voltage (VDS) | 200 V | 40 V |
| Continuous Drain Current (ID, Tc) | 34 A | 195 A |
| Power Dissipation (PD, Tc) | 136 W | 231 W |
| On-Resistance RDS(on) max | 32 mOhm at VGS = 10 V | — |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) | — |
| Gambaran Suhu Operasi | -55 C to +175 C (Tj) | [DATA_NEEDED: Tj max] |
| Kemasan | PG-TO252-3 (DPAK) | PG-TO263-3 (D2PAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| JEDEC Qualification | Qualified for target application | — |
| Channel Mode | Enhancement mode | — |
| Gate Threshold Level | Normal level (per datasheet title) | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | StrongIRFET™ |
| Jenis Transistor | — | N-Channel MOSFET |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) | — | 1.9 mOhm max |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Aras MSL | — | 1 (unlimited) |